Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

Nanoscale Research Letters

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[1] 0000 0001 1516 2393, grid.5947.f, Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), Alfred Getz vei 2B, 7491, Trondheim, Norway;0000 0004 0400 1852, grid.6324.3, VTT Technical Research Centre of Finland Ltd., P. O. Box 1000, FI-02044 VTT, Espoo, Finland;0000 0004 0410 2071, grid.7737.4, Division of Materials Physics, Physics Department, University of Helsinki, Gustaf Hällströmin katu 2a, FI-00014, Helsinki, Finland;0000000108389418, grid.5373.2, Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150, Espoo, Finland;0000000108389418, grid.5373.2, Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150, Espoo, Finland;grid.424028.8, Beneq Oy, Olarinluoma 9, FI-02200, Espoo, Finland;grid.424028.8, Beneq Oy, Olarinluoma 9, FI-02200, Espoo, Finland;

关键词: Carbon dioxide;    Silicon dioxide;    ALD;    Plasma;    Radicals;    Oxidation;   

DOI  :  10.1186/s11671-019-2889-y

来源: publisher

【 摘 要 】

In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of ~ 1.15 Å/cycle showed a density of ~ 2.1 g/cm3, a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.

【 授权许可】

CC BY