A novel SEU hardened SRAM bit-cell design

IEICE Electronics Express

Tiehu Li¹  Junan Zhang¹  Jia Liu²  Yintang Yang² 

[1] School of Microelectronics, Xidian University;Science and Technology on Analog Integrated Circuit Laboratory

关键词: SRAM;    single event upset;    radiation hardening by design;   

DOI  :  10.1587/elex.14.20170413

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

An improved single event upset (SEU) tolerant static random access memory (SRAM) bit-cell with differential read and write capability is proposed. SPICE simulation suggests a more than 1000 times improvement of the critical charge over the standard 6T SRAM cell. With the SEU robustness greatly enhanced at low area and electrical performance costs, the proposed cell is well suited to harsh radiation environment applications such as aerospace and high energy physics.

【 授权许可】

CC BY