A hybrid model of III-V FETs with accurate high-order derivatives

IEICE Electronics Express

Qi-Jun Zhang¹  Hai-Peng Fu²  Yuan-Yuan Zhu²  Jian-Guo Ma²  Cheng-Yu Zhang² 

[1] Qingdao Institute for Ocean Technology of Tianjin University;School of Microelectronics, Tianjin University

关键词: transistor modeling;    I-V modeling;    high-order derivatives;    pHEMT;    artificial neural network (ANN);   

DOI  :  10.1587/elex.14.20170448

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

In this article, a hybrid model for the current-voltage (I-V) characteristic and its high-order derivatives of III-V FETs is presented. The proposed model divides the entire operating region into several subregions and chooses optimum models in each subregion. The artificial neural network (ANN) techniques are employed to smoothly link the boundaries. The validity of this model has been verified by comparing the measurement and modeled results of a GaAs pHEMT.

【 授权许可】

CC BY