Epitaxial Layer Design for High Performance GaAs pHEMT SPDT MMIC Switches

ETRI Journal

关键词: switching speed;    isolation;    SPDT MMIC switch;    upper-to-lower planar-doping ratio;    hydrodynamic device simulation;    pHEMT;   

Others  :  1185824
DOI  :  10.4218/etrij.09.0208.0348

【 摘 要 】

From a hydrodynamic device simulation for the pseudomorphic high electron mobility transistors (pHEMTs), we observe an increase of maximum extrinsic transconductance and a decrease of source-drain capacitances. This gives rise to an enhancement of the switching speed and isolation characteristics as the upper-to-lower planar-doping ratios (UTLPDR) increase. On the basis of simulation results, we fabricate single-pole-double-throw transmitter/receiver monolithic microwave integrated circuit (MMIC) switches with the pHEMTs of two different UTLPDRs (4:1 and 1:2). The MMIC switch with a 4:1 UTLPDR shows about 2.9 dB higher isolation and approximately 2.5 times faster switching speed than those with a 1:2 UTLPDR.

   

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