A physical model of electron trapping/detrapping in electrically stressed oxide

IEICE Electronics Express

Cong Li¹  Hongyi Wang¹  Liming Zheng¹  Shunqiang Xu¹  Jianfei Wu¹  Bingbing Zhang¹ 

[1] School of Electronic Science and Engineering, National University of Defense Technology

关键词: trapping;    detrapping;    oxide trap;    electron;    endurance;    retention;   

DOI  :  10.1587/elex.14.20170565

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

A physical model of electron trapping/detrapping in electrically stressed oxide has been proposed in this paper. The new model is based on both inelastic multi-phonon trap-assisted tunneling and thermal emission, and also considers the capture effect of oxide bulk traps. It handles every trap separately, and establishes the dynamic procedure of traps capture and emission of electrons. Finally, through the proposed model we may accurately and effectively obtain the filling state of all the oxide traps at any stress and any time, which is very useful for the modeling of the endurance and data retention characteristics of floating gate nonvolatile memories.

【 授权许可】

CC BY