Bulletin of Materials Science | |
Photocurrent analysis of AgIn$_5$S$_8$ crystal | |
关键词: Photocurrent; spectral distribution; trapping; temperature dependence; thermal quenching.; | |
学科分类:材料工程 | |
来源: Indian Academy of Sciences | |
【 摘 要 】
The photocurrent (PC) spectrum of AgIn$_5$S$_8$ crystal consists of a single peak, which provides to determine the bandgap energy by applying the Moss rule. The temperature dependence of the bandgap energy was alsocalculated. The PC dramatically increased by pre-illumination with light having wavelength corresponding to the bandgap of AgIn$_5$S$_8$. The temperature-dependent PC of the sample was measured at different temperatures from80 to 300 K and the PC spectrum consisted a single broad peak. Thermal quenching of the PC was observed to start at $\sim$105 K and the PC completely quenched at $\sim$180 K. The quenching mechanism was discussed in terms of the two-centre model. The height of the PC peak rised linearly with applied voltage up to 5.0 V under constant intensity of light. Similarly, the dark current–voltage characteristics consisted of a single region dominating an ohmicbehaviour, and no space charge limited region was apparent at various temperatures up to 20 V.
【 授权许可】
CC BY
【 预 览 】
Files | Size | Format | View |
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RO201902188784905ZK.pdf | 505KB | download |