| IEICE Electronics Express | |
| Class-C architecture for cross-coupled FBAR oscillator to further improve phase noise | |
| Ramesh K. Pokharel1  Siti Amalina Enche Ab Rahim2  | |
| [1] Fakulti Kejuruteraan Elektrik, Universiti Teknologi Mara;Graduate School of Information Science and Electrical Engineering, Kyushu University | |
| 关键词: class-C oscillator; FBAR; cross-coupled topology; | |
| DOI : 10.1587/elex.14.20170056 | |
| 学科分类:电子、光学、磁材料 | |
| 来源: Denshi Jouhou Tsuushin Gakkai | |
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【 摘 要 】
In this letter, a class-C architecture for an oscillator employing film bulk acoustic resonator (FBAR) is presented to improve the phase noise significantly in 1/f3 region. The advantages offers by class-C operation are exploited in order to reduce the noise contributed by the current-source transistor in cross-coupled topology. An adaptive biasing circuit is used in order to ensure the oscillation start-up. The post-layout simulation incorporating all parasitic and representing FBAR by modified Butterworth Van Dyke (MBVD) model illustrates the phase noise improvement by 17 dBc/Hz at 100 kHz offset of a 1.9 GHz carrier compared to the FBAR based cross-coupled topology presented by the authors [1].
【 授权许可】
CC BY
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| RO201902194669190ZK.pdf | 1082KB |
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