Design of broadband inverse class-F power amplifier based on resistive-reactive series of inverse continuous modes

IEICE Electronics Express

Min Zhang¹  Xin Cao¹  Zongxi Tang¹  Weimin Shi¹ 

[1] School of Electronic Engineering, University of Electronic Science and Technology of China

关键词: broadband;    class inverse F;    power amplifier;    bare GaN HEMT;    resistive-reactive;    series of inverse continuous modes;   

DOI  :  10.1587/elex.14.20170537

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

In this paper, a resistive-reactive series of continuous inverse modes is proposed for extending bandwidth of the series of Inverse continuous mode (SICM). A broadband class inverse F power amplifier (PA), which operates across 2.5–4.1 GHz (48.5% bandwidth), is designed by using bare GaN HEMT to prove this theory. Experiment results indicate that the PA mentioned above is able to output 9.1–18.4 W saturation power and the drain efficiency can reach 47%–75% in the whole interested band. The average output power of this designed PA is 14.2 W and the average drain efficiency is 60.1%.

【 授权许可】

CC BY