A 1.2 mV ripple, 4.5 V charge pump using controllable pumping current technology

IEICE Electronics Express

Liyin Fu¹  Teng Chen¹  Cece Huang¹  Zongliang Huo¹  Yu Wang²  Qi Wang² 

[1] Institute of Microelectronics of Chinese Academy of Sciences;School of Microelectronics, University of Chinese Academy of Sciences

关键词: charge pump;    CPC;    small ripple;    flash memory;   

DOI  :  10.1587/elex.14.20170699

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

This paper represents a 4.5 V regulated charge pump with extremely small ripple. The pump designed with Voltage Doubler (VD) significantly reduces the output ripple voltage. In addition, this circuit utilizes a controllable pumping current (CPC) technology, which achieves automatically adjusting output current by feedback mechanism and resizing transfer transistors. The proposed charge pump has been demonstrated in 0.32 µm 3D NAND periphery technology under 3 V power supply. Simulation results show that the output ripple voltage is 1.2 mV at 5 mA load current with 0.1 µF load capacitance. The maximum current drivability and power efficiency is 8 mA and 81% respectively.

【 授权许可】

CC BY