A single-poly EEPROM with low leakage charge pump and peripheral circuits for passive RFID tag in a standard CMOS technology

IEICE Electronics Express

Huailin Liao¹  Chunguang Wang¹  Fan Yang¹  Yongan Zheng¹  Ling Shen¹ 

[1] Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University

关键词: charge pump;    EEPROM;    low leakage;    peripheral circuits;    single-poly;    UHF RFID tag;   

DOI  :  10.1587/elex.14.20170315

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

A complete single-poly 2k-bit EEPROM solution including memory cells and peripheral circuits is presented and embedded into a passive RFID tag using a 0.18-µm standard CMOS technology. A charge pump with a Diode-C all-pass network and peripheral circuits without static current are proposed to reduce power consumption. A three-transistor memory cell is adopted for CMOS-compatibility, low operation voltage, and low complexity of drivers. The proposed EERPOM occupies an active area of 0.21 mm2. The leakage current during read operation is 36 nA from 1-V supply, while the static current during write operation is 1.3 µA from 1.8-V supply.

【 授权许可】

CC BY