期刊论文详细信息
IEICE Electronics Express
A single-poly EEPROM with low leakage charge pump and peripheral circuits for passive RFID tag in a standard CMOS technology
Huailin Liao1  Chunguang Wang1  Fan Yang1  Yongan Zheng1  Ling Shen1 
[1] Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University
关键词: charge pump;    EEPROM;    low leakage;    peripheral circuits;    single-poly;    UHF RFID tag;   
DOI  :  10.1587/elex.14.20170315
学科分类:电子、光学、磁材料
来源: Denshi Jouhou Tsuushin Gakkai
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【 摘 要 】

A complete single-poly 2k-bit EEPROM solution including memory cells and peripheral circuits is presented and embedded into a passive RFID tag using a 0.18-µm standard CMOS technology. A charge pump with a Diode-C all-pass network and peripheral circuits without static current are proposed to reduce power consumption. A three-transistor memory cell is adopted for CMOS-compatibility, low operation voltage, and low complexity of drivers. The proposed EERPOM occupies an active area of 0.21 mm2. The leakage current during read operation is 36 nA from 1-V supply, while the static current during write operation is 1.3 µA from 1.8-V supply.

【 授权许可】

CC BY   

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