Optimization of process parameter for synthesis of silicon quantum dots using low pressure chemical vapour deposition

Bulletin of Materials Science

关键词: Annealing;    AFM;    LPCVD;    thin film;    quantum dot.;   

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Si quantum dots-based structures are studied recently for performance enhancement in electronic devices. This paper presents an attempt to get high density quantum dots (QDs) by low pressure chemical vapour deposition (LPCVD) on SiO2 substrate. Surface treatment, annealing and rapid thermal processing (RTP) are performed to study their effect on size and density of QDs. The samples are also studied using Fourier transformation infrared spectroscopy (FTIR), atomic force microscopy (AFM), scanning electron microscopy (SEM) and photoluminescence study (PL). The influence of Si–OH bonds formed due to surface treatment on the density of QDs is discussed. Present study also discusses the influence of surface treatment and annealing on QD formation.

【 授权许可】

CC BY