Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range

Bulletin of the Polish Academy of Sciences. Technical Sciences

R.P. Sarza?aPhotonics Group, Institute of Physics, Lodz University of Technology, 219 Wolczanska St., 90-924 Lodz, PolandOther articles by this author:De Gruyter OnlineGoogle Scholar¹  L. FrasunkiewiczPhotonics Group, Institute of Physics, Lodz University of Technology, 219 Wolczanska St., 90-924 Lodz, PolandOther articles by this author:De Gruyter OnlineGoogle Scholar¹  ?. PiskorskiCorresponding authorPhotonics Group, Institute of Physics, Lodz University of Technology, 219 Wolczanska St., 90-924 Lodz, PolandEmailOther articles by this author:De Gruyter OnlineGoogle Scholar¹ 

[1] Photonics Group, Institute of Physics, Lodz University of Technology, 219 Wolczanska St., 90-924 Lodz, Poland

关键词: Keywords: strained QWs;    GaInNAs;    GaInAsSb;    mid-infrared radiation;    numerical analysis;   

DOI  :  10.1515/bpasts-2015-0070

学科分类：工程和技术（综合）

来源: Polska Akademia Nauk * Centrum Upowszechniania Nauki / Polish Academy of Sciences, Center for the Advancement of Science

【 摘 要 】

In the present paper the results of the computer analysis of the GaAs-based and GaSb-based active regions that can be applied in compact semiconductor laser sources of radiation at mid-infrared wavelengths are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 μm the maximal gain obtained for GaInNAs/AlGaInAs active region is high only for thick, highly-strained GaInNAs QWs with N concentration higher than 2%. Much higher gain in this wavelength range can be obtained for GaInAsSb/AlGaAsSb active region, which offers relatively high gain even at 4.5 μm when the Sb content in GaInAsSb and compressive strain in this layer are equal to 50% and − 2%, respectively.

【 授权许可】

Unknown