GaInNAs quantum-well vertical-cavity surface-emitting lasers emitting at 2.33 μm

Bulletin of the Polish Academy of Sciences. Technical Sciences

R.P. Sarza?aCorresponding authorPhotonics Group, Institute of Physics, Lodz University of Technology, 219 Wolczanska St., 90-924 Lodz, PolandEmailOther articles by this author:De Gruyter OnlineGoogle Scholar¹  ?. PiskorskiPhotonics Group, Institute of Physics, Lodz University of Technology, 219 Wolczanska St., 90-924 Lodz, PolandOther articles by this author:De Gruyter OnlineGoogle Scholar¹ 

[1] Photonics Group, Institute of Physics, Lodz University of Technology, 219 Wolczanska St., 90-924 Lodz, Poland

关键词: Keywords : simulation of a diode laser operation;    QW VCSELs;    mid-infrared radiation;    dilute nitrides;   

DOI  :  10.2478/bpasts-2013-0079

学科分类：工程和技术（综合）

来源: Polska Akademia Nauk * Centrum Upowszechniania Nauki / Polish Academy of Sciences, Center for the Advancement of Science

【 摘 要 】

In the present paper, the comprehensive fully self-consistent optical-electrical-thermal-recombination model is used to determine the optimal structure of the possible GaInNAs quantum-well (QW) tunnel-junction (TJ) vertical-cavity surface-emitting lasers (VCSELs) with single-fundamental-mode operation at 2.33 μm wavelength suited for carbon monoxide sensing applications. From among various considered structures, the diode laser with 4-μm TJ and two 6-nm Ga0.15In0.85N0.015As0.985/Ga0.327In0.673As0.71P0.29 QWs has the lowest threshold current and seems to be optimal for the above applications. Higher threshold currents are obtained for Ga0.15In0.85N0.015As0.985/Al0.138- Ga0.332In0.530As QW structures but the latter can be grown in reactors without P source which are used for fabrication of GaAs-based devices. Both the modelled VCSELs offer a very promising room temperature continuous wave performance and may represent an alternative choice to GaSb-based lasers.

【 授权许可】

Unknown