Application of X-ray topography to USSR and Russian space materials science

IUCrJ

Shul'pina, I.L.¹  Prokhorov, I.A.²  Bezbakh, I.Z.²  Serebryakov, Y.A.² 

[1]Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St Petersburg, Russian Federation

[2]Research Center for Space Materials Science, Branch of the Shubnikov Institute of Crystallography of the Russian Academy of Sciences, Kaluga, Russian Federation

关键词: X-RAY TOPOGRAPHY;    SPACE MATERIALS SCIENCE;    MICROGRAVITY;    SEMICONDUCTOR SINGLE CRYSTALS;    GROWTH STRIATIONS;    DEFECTS;    PHYSICAL MODELLING;    THERMOGRAVITATIONAL CONVECTION;   

DOI  :  10.1107/S2052252516003730

学科分类：数学（综合）

来源: International Union of Crystallography

【 摘 要 】

The authors' experience of the application of X-ray diffraction imaging in carrying out space technological experiments on semiconductor crystal growth for the former USSR and for Russia is reported, from the Apollo–Soyuz programme (1975) up to the present day. X-ray topography was applied to examine defects in crystals in order to obtain information on the crystallization conditions and also on their changes under the influence of factors of orbital flight in space vehicles. The data obtained have promoted a deeper understanding of the conditions and mechanisms of crystallization under both microgravity and terrestrial conditions, and have enabled the elaboration of terrestrial methods of highly perfect crystal growth. The use of X-ray topography in space materials science has enriched its methods in the field of digital image processing of growth striations and expanded its possibilities in investigating the inhomogeneity of crystals.

【 授权许可】

CC BY