Une surstructure de α-Ge, type diamant, induite par un dopage d'anti­moine

Acta Crystallographica Section E: Crystallographic Communications

Roisnel, T.¹  Herrero, A.G.²  Otero-Diáz, L.C.³  Hammoudi, L.⁴  Kars, M.⁴ 

[1]Centre de Diffractométrie X, Sciences Chimiques de Rennes, UMR 6226 CNRS Université de Rennes 1, Campus de Beaulieu, Avenue du Général Leclerc, France

[2]Centro de Microscopia Electrónica, Universidad Complutense, 28040 Madrid, Spain

[3]Departomento Inorgánica, Facultad C.C. Químicas, Universidad Complutense, 28040 Madrid, Spain

[4]Université Houari-Boumedienne, Faculté de Chimie, Laboratoire Sciences des Matériaux, BP 32 El-Alia 16111 Bab-Ezzouar, Algeria

关键词: CRYSTAL STRUCTURE;    ANTIMONY;    DOPED GERMANIUM;    SUPERSTRUCTURE;   

DOI  :  10.1107/S2056989017004996

学科分类：数学（综合）

来源: International Union of Crystallography

【 摘 要 】

Single crystals of anti­mony-doped germanium, Ge1–xSbx+0.01 (x ≃ 0.0625), were grown by chemical transport reaction. The alloy crystallizes as a superstructure of diamond-type α-Ge. All atoms in the asymmetric unit lie on special positions and are characterized by strong covalent bonds. The anti­mony atoms substitute for one germanium atom at full occupancy at Wyckoff position 4a (site symmetry -43m), and are also at an adjacent tetra­hedral inter­stitial site with partially occupation (16%) at position 4c (or 4d) (site symmetry -43m). The structural model does not show close Sb⋯Sb contacts, and suggests that the inter­stitial anti­mony atoms move between the two adjacent tetra­hedral sites.

【 授权许可】

CC BY