Effect of annealing atmosphere on microstructure, optical and electronic properties of spray-pyrolysed In-doped Zn(O,S) thin films

Bulletin of Materials Science

关键词: Buffer layer;    window layer;    thin film solar cell;    doping;    electrical properties.;   

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Spray-pyrolysed zinc oxy-sulphide Zn(O,S) has been doped with varying concentrations of indium (In) toimprove its electrical and optical properties for possible application as buffer layer in thin film solar cells. The In-dopingin Zn(O,S) is found to change the electron carrier concentration from 10$^{19}$ to 10$^{18}$ cm$^{−3}$ and a subsequent annealing in argon atmosphere is found to improve its electrical conductivity. Moreover, annealing in air atmosphere reduces the carrier concentration to a range of 10$^{13}$–10$^{15}$ cm$^{−3}$ making it useful as a buffer layer. The reduction in degeneracy of In-doped Zn(O,S) is desirable for its application as buffer material, whereas annealing in argon makes it suitable as electron membrane (window layer) in thin film solar cell.

【 授权许可】

CC BY