GaN high electron mobility transistors: a review from parasitic elements extraction's perspective

The Journal of Engineering

Anwar Jarndal¹  Ammar Kouki² 

[1] Department of Electrical and Computer Engineering, University of Sharjah, Sharjah 27272, UAE;LACIME Lab, École de Technologie Supérieure, Montréal, Québec H3C 1K3, Canada

关键词: deembedding open structure;    high electron mobility transistor;    GaN;    parasitic elements extraction;    high-current stress forward measurement;    pinch-off measurement;    cold pinch-off measurement;   

DOI  :  10.1049/joe.2016.0161

学科分类：工程和技术（综合）

来源: IET

【 摘 要 】

In this study, three different parameter extraction approaches for GaN high electron mobility transistors are presented and evaluated. The first approach depends on only cold pinch-off measurements, the second approach based on cold pinch-off and forward measurements and the last one uses de-embedding open structure in addition to unbiased cold measurements at V DS = 0 V and V GS = 0 V. The extracted values using the first two methods have a very good agreement with the extracted values using the last mentioned procedure. This study results verify the applicability of using either pinch-off measurements or cold unbiased measurements with open structure to extract the device parasitic elements. This accordingly will reduce the cost of using extra de-embedding structures or high-current stress forward measurements.

【 授权许可】

CC BY