期刊论文详细信息
The Journal of Engineering
Performance analysis of single-electron transistor at room-temperature for periodic symmetric functions operation
Ali Mir1  Mostafa Miralaie1 
[1] Faculty of Engineering, Lorestan University, Khoram-Abad, Iran
关键词: coulomb oscillations;    peak-to-valley current;    bias voltage;    tunnel barrier resistance;    temperature 293 K to 298 K;    periodic symmetric functions operation;    tunnelling current rates;    single electron transistor;    Pauli exclusion principle;   
DOI  :  10.1049/joe.2016.0139
学科分类:工程和技术(综合)
来源: IET
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【 摘 要 】

For the first time, the authors have investigated the analysis of the room-temperature operation of single-electron transistor (SET) for periodic symmetric functions (PSFs). They demonstrate that in SETs due to the Pauli exclusion principle the distance between current peaks against bias voltage in coulomb oscillations will be asymmetric. Also, because the separated energy levels have unequal tunnel-barrier resistance, different tunnelling current rates are obtained for each level. So, the unequal peak-to-valley current ratio (PVCR) will be observed in the coulomb oscillations, and therefore the operation of room-temperature of silicon SET-based PSFs is impossible.

【 授权许可】

CC BY   

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