Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography

Proceedings

Granz, Tony¹ 

关键词: colloidal lithography;    nanosphere lithography;    nanostructure fabrication;    gallium nitride (GaN);    ICP-DRIE;    wet chemical etching;    selective area deposition;    GaN surface treatment;   

DOI  :  10.3390/proceedings1040309

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

Vertically aligned 3D gallium nitride (GaN) nanowire arrays with sub-50 nm feature sizes were fabricated using a nanosphere lift-off lithography (NSLL) technique combined with hybrid top-down etching steps (i.e., inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching). Owing to the well-controlled chemical surface treatment prior to the nanobead deposition and etching process, vertical GaN nanowire arrays with diameter of ~35 nm, pitch of ~350 nm, and aspect ratio of >10 could be realized using 500 nm polystyrene nanobead (PN) masks. This work has demonstrated a feasibility of using NSLL as an alternative for other sophisticated but expensive nanolithography methods to manufacture low-cost but highly ordered 3D GaN nanostructures.

【 授权许可】

CC BY