Effect of input noise on phase coherence in a lattice of memristors acting as a voltage divider

The Journal of Engineering

Hugh Griffiths¹  Alfonso Farina²  Marco Frasca³ 

[1] Department of Electronic and Electrical Engineering, University College London, Gower Street, London WC1E 6BT, UK;IEEE AESS Distinguished Lecturer, CTIF Industry Advisory Chair, UCL Visiting Professor, Rome, Italy;MBDA Italia S.p.A., Via Monte Flavio, 45, 00131 Rome, Italy

关键词: normal resistor lattice;    sinusoidal input signal;    tolerance analysis;    signal-to-noise ratio;    memristor lattice;    Gaussian distributed r;    om noise;    nonlinear systems;    classical resistor components;    phase coherence;    memristor dividers;    memristor parameters;    Fibonacci numbers;    voltage signal;    voltage divider;    input noise;   

DOI  :  10.1049/joe.2016.0302

学科分类：工程和技术（综合）

来源: IET

【 摘 要 】

It is known that Fibonacci numbers emerge from a network of voltage dividers comprising just resistors. The authors find that the same happens to a lattice of memristors as recently devised. Between the memristor dividers there is a phase coherence with respect to a sinusoidal input signal. Interestingly, they show that the effect of Gaussian distributed random noise, which adds to the voltage signal at the input of the memristor lattice, may affect the coherence. It is shown that when the signal-to-noise ratio goes below 3 dB and the number of dividers in the lattice is ten there is an abrupt reduction of phase coherence typical of non-linear systems. This behaviour does not happen with a lattice of normal resistors. A tolerance analysis of the classical resistor components as well as of the memristor parameters is also presented.

【 授权许可】

CC BY