High voltage buried step-doping p+ layer silicon-on-insulator lateral double diffused mosfet (SOI LDMOSI) with a back-gate

International Journal of Physical Sciences

Xiaoming Yang¹ 

关键词: Silicon-on-insulator;    breakdown voltage;    back-gate;    buried step-doping p+ layer.;   

DOI  :  10.5897/IJPS11.849

学科分类：物理（综合）

来源: Academic Journals

【 摘 要 】

A high voltage buried step-doping p+layer (BSP+L) lateral double diffused mosfet (LDMOS) on silicon-on-insulator (SOI) with a back-gate is proposed. The new structure is characterized by a BSP+L on the buried oxide under the source. When a high positive bias is applied to the back-gate in the off-state, the depleted BSP+L greatly enhancesthe electric field in the buried oxide layer under the source. Compared with conventional SOI LDMOS, much higher vertical breakdown voltage is sustained by the buried oxide layer under the source.Moreover, the reduced surface electric field (RESURF) effect is enhanced by the BSP+L, resulting in improvement of lateral breakdown voltage. Simulation results show that breakdown voltage of the new structure is improved greatly while on-resistance is relatively low.

【 授权许可】

CC BY