期刊论文详细信息
| Active and Passive Electronic Components | |
| Diode Physical Parameters for HEXFETs Characterization of Dose Effect | |
| K. Raïs1 E. Bendada2 | |
| [1] Laboratoire de Caractérisation des Composants à Semiconducteurs, Université Chouaïb Doukkali, B.P. 20, El Jadida, , Morocco, ucd.ac.ma;Département de Génie Electrique, Universuté My Ismaïl-F.S.T., B.P. 509, Errachidia, , Morocco, umi.ac.ma | |
| 关键词: diode parameters; HEXFET; Dose effects; | |
| Others : 1369078 DOI : 10.1155/1998/26372 |
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| received in 1998-02-05, accepted in 1998-04-15, 发布年份 1998 | |
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【 授权许可】
Copyright © 1998 Hindawi Publishing Corporation 1998
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