Characterization of an Oxidized Porous Silicon Layer by Complex Process Using RTO and the Fabrication of CPW-Type Stubs on an OPSL for RF Application

ETRI Journal

关键词: stub;    RTO;    Porous silicon;   

Others  :  1185120
DOI  :  10.4218/etrij.04.0103.0124

【 摘 要 】

This paper proposes a 10-µm thick oxide layer structurethat can be used as a substrate for RF circuits. Thestructure has been fabricated using an anodic reactionand complex oxidation, which is a combined process oflow-temperature thermal oxidation (500 °C, for 1 hr atH₂O/O₂) and a rapid thermal oxidation (RTO) process(1050 °C, for 1 min). The electrical characteristics of theoxidized porous silicon layer (OPSL) were almost thesame as those of standard thermal silicon dioxide. Theleakage current density through the OPSL of 10 µm wasabout 10 to 50 nA/cm² in the range of 0 to 50 V. Theaverage value of the breakdown field was about 3.9MV/cm. From the X-ray photo-electron spectroscopy (XPS)analysis, surface and internal oxide films of OPSL prepared bya complex process were confirmed to be completely oxidized.The role of the RTO process was also important for thedensification of the porous silicon layer (PSL) oxidized at alower temperature. The measured working frequency of thecoplanar waveguide (CPW) type short stub on an OPSLprepared by the complex oxidation process was 27.5 GHz, andthe return loss was 4.2 dB, similar to that of the CPW-typeshort stub on an OPSL prepared at a temperature of 1050 °C(1 hr at H₂O/O₂). Also, the measured working frequency of theCPW-type open stub on an OPSL prepared by the complexoxidation process was 30.5 GHz, and the return was 15 dB atmidband, similar to that of the CPW-type open stub on anOPSL prepared at a temperature of 1050 °C (1 hr at H₂O/O₂).

   

【 参考文献 】

• [1]J. Bruechler, E. Kasper, P. Russer, and K.M. Strohm, "Silicon High-Resistivity-Substrate Millimeter-Wave Technology," IEEE Trans. Microwave Theory Tech., vol. MTT-34, Dec. 1986, pp.1516-1521.
• [2]H.S. Kim, H.J. Kim, S.E. Hong, D.Y. Jung, and E.S. Nam, "Fabrication and Characteristics of an InP Single HBT and Waveguide PD on Double Stacked Layers for an OEMMIC," ETRI J., vol. 26 no. 1, Feb. 2004, pp. 61-64.
• [3]K.J. Herrick, Thomas A. Schwarz, and Linda P.B., "Si-Micromachined Coplanar Waveguides for Use in High-Frequency Circuits," IEEE Tran. Microwave Theory Tech., vol. 46, June 1998, pp. 762-767.
• [4]A. Dehe, H. Klingbeil, C. Weil, and H.L. Hartnagel., "Membrane-Supported Coplanar Waveguides for MMIC and Sensor Application," IEEE Microwave and Guided Wave Letters, vol. 8, no. 5, May 1998, pp. 185-187.
• [5]T. Unagami, "Oxidation of Porous Silicon and Properties of Its Oxide Film," Jpn. J. Appl. Phys., vol. 19, 1980, pp. 231-241.
• [6]R.L. Peterson and R.F. Drayton, "Dielectric Properties of Oxidized Porous Silicon in a Low Resistivity Substrate," IEEE MTT-S Dig., 2001, pp. 765 - 768.
• [7]H.S. Kim, Y.H. Xie, M. DeVincentis, T. Itoh, and K.A. Jenkins, "A Study of Unoxidized Porous Si as an Isolation Material for Mixed-Signal Integrated Circuit Applications," J. Appl. Phys., vol. 93, 2003, pp.4226-4230.
• [8]J.Y. Park, J.H. Lee, J.H. Sim, C.S. Cho, and Y.H. Bae, "Fabrication of a Transmission Line on a Thick Silicon Dioxide Air-Bridge Using a Complex Oxidation Process and MEMS Technology," JKPS, vol. 41, July 2002, pp. 160-163.
• [9]J.Y. Park and J.H. Lee, "Characterization of 10 μm Thick Porous Silicon Dioxide Obtained by Complex Oxidation Process for RF Application," Materials Chemistry and Physics, vol. 82, Aug. 2003, pp. 134-139.
• [10]S. Iordanescu, G. Bartolucci, S. Simion, and M. Dragoman, "Coplanar Waveguide Stub/Filters on Thin Membranes and Standard Substrates," IEEE MTT-S Dig., 1997, pp. 357-360.
• [11]K. Hettak, N. Dib, A. Omar, G.Y. Delisle, M.G. Stubbs, and S. Toutain, "A Useful New Class of Miniature CPW Shunt Stubs and Its Impact on Millimeter-Wave Integrated Circuits," IEEE Trans. On MTT, vol. 47, Dec. 1999, pp.2340-2349.
• [12]K. Hettak, T. Laneve, and M.G. Stubbs, "Size-Reduction Techniques for CPW and ACPS Structures," IEEE microwave Theory Tech., vol. 49, no. 11, Nov. 2001, pp. 2112-2116.