Thick Metal CMOS Technology on High Resistivity Substrate and Its Application to Monolithic L-band CMOS LNAs

ETRI Journal

关键词: High resistivity substrate;    L-band;    LNA;    Low Noise Amplifier;    RF CMOS technology;   

Others  :  1184187
DOI  :  10.4218/etrij.99.0199.0401

【 摘 要 】

Thick metal 0.8㎛ CMOS technology on high resistivity substrate(RF CMOS technology) is demonstrated for the L-band RF IC applications, and we successfully implemented it to the monolithic 900 MHz and 1.9 GHz CMOS LNAs for the first time. To enhance the per

   

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