A 15 nm Ultra-thin Body SOI CMOS Device with Double Raised Source/Drain for 90 nm Analog Applications

ETRI Journal

关键词: static noise margin;    self-heating;    series resistance;    single raised;    double raised;    Si selective epitaxial growth;    Fully-depleted SOI;   

Others  :  1184948
DOI  :  10.4218/etrij.04.0104.0074

【 摘 要 】

Fully-depleted silicon-on-insulator (FD-SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the single- raised (SR) and double-raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self-heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self-heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a 1.1 μm2 6T-SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra-thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.

   

【 参考文献 】

• [1]T. Ohno, Y. Kado, M. Harada, and T.T. Tsuchiya, "Experimental 0.25-μm-Gate Fully Depleted CMOS/SIMOX Process Using a New Two-Step LOCOS Isolation Technique," IEEE Trans. Electron Devices, vol. 42, 1995, pp. 1481.
• [2]T.C. Hsiao, N.A. Kistler, and J.C.S. Woo, "Modeling the I-V Characteristics of Fully Depleted Submicrometer SOI MOSFET’s ," Electron Device Lett., vol. 15, 1994, pp. 45.
• [3]R. Chau, J. Kavalieros, B. Doyle, A. Murthy, N. Paulsen, D. Lionberger, D. Barlage, R. Arghavani, B. Roberds, and M. Doczy, "A 50 nm Depleted-Substrate CMOS Transistor (DST)," Int. Electron Device Meet. Technical Digest, 2001, pp. 62.
• [4]K.A. Jenkins, J.Y.-C. Sun, and J. Gautier, "Characteristics of SOI FET’s Under Pulsed Conditions," IEEE Trans. Electron Devices, vol. 44, 1997, pp. 1923.
• [5]Y.C. Tseng, W.M. Huang, D. Monk, D. Diaz, J.M. Ford, and J.C.S. Woo, "Comprehensive Study on AC Characteristics in SOI MOSFETs for Analog Applications," Symp. VLSI Tech. Dig., 1998, pp. 112.
• [6]Hyeokjae Lee, Young June Park, Hong Shick Min, Jong Ho Lee, Hyungsoon Shin, Wookyung Sun, and Dae-Gwan Kang, "Effects of Shallow Trench Isolation on Silicon-on-Insulator Devices for Mixed Signal Processing," J. Korean Phys. Soc., vol. 40, 2002, pp. 653.
• [7]Y.W. Kim, J.H. Ahn, T.S. Park, C.B. Oh, K.T. Lee, H.S. Kang, D.H. Lee, Y.G. Ko, K.S. Cheong, J.W. Jun, S.H. Liu, J. Kim, J.L. Nam, S.R. Ha, J.B. Park, S.A. Song, and K.P. Suh, Symp. "Robust Process Integration of 0.78m2 Embedded SRAM with NiSi Gate and Lo
• [8]Y. Ono, M. Nagase, M. Tabe, and Y. Takahashi, "Thermal Agglomeration of Thin Single Crystal Si on SiO2 in Vacuum," Jpn. J. Appl. Phys., vol. 34, 1995, pp. 1728.
• [9]M.H. Oh, C.H. Park, H.S. Kang, C.B. Oh, Y.W. Kim, and K.P. Suh, "Fully Depleted SOI CMOS Device with Raised Source/Drain for 90 nm Embedded SRAM Technology," Solid State Devices and Materials, 2003, pp. 756.
• [10]Yongjae Lee, Youngshig Choi, and Jichel Bea, "A Novel Structure MOSFET’s Fabricated by Using SiGe Selective Epitaxial Growth Method and Laser Induced Atomic Layer Doping Method," J. Korean Phys. Soc., vol. 41, 2002, pp. 82.
• [11]Dong-Soo Woo, Boo-Sik Park, Jong Duk Lee, and Byung-Gook Park, "Fabrication of a 0.2-μm Ultra-Thin SOI Inverted Sidewall Recessed Channel CMOS with Single-Type Polysilicon Gate," J. Korean Phys. Soc., vol. 40, 2002, pp. 68.
• [12]E. Seevinck, F.J. List, and J. Lohstroh, "Static-Noise Margin Analysis of MOS SRAM Cells," IEEE J. Solid-State Circuits, vol. 22, 1987, pp. 748.