Small-Sized High-Power PIN Diode Switch with Defected Ground Structure for Wireless Broadband Internet

ETRI Journal

关键词: defected ground structure;    PIN diode;    SPDT switch;   

Others  :  1185473
DOI  :  10.4218/etrij.06.0205.0080

【 摘 要 】

This letter presents a small-sized, high-power single-pole double-throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow-wave characteristic, the DGS is used for the quarter-wave (l/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt-connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt-type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns.

   

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