期刊论文详细信息
ETRI Journal
Ultra-Low-Power Differential ISFET/REFET Readout Circuit
关键词: weak inversion;    low power;    CMOS;    ISFET;   
Others  :  1185846
DOI  :  10.4218/etrij.09.0208.0368
PDF
【 摘 要 】

A novel ultra-low-power readout circuit for a pH-sensitive ion-sensitive field-effect transistor (ISFET) is proposed. It uses an ISFET/reference FET (REFET) differential pair operating in weak-inversion and a simple current-mode metal-oxide semiconductor FET (MOSFET) translinear circuit. Simulation results verify that the circuit operates with excellent common-mode rejection ability and good linearity for a single pH range from 4 to 10, while only 4 nA is drawn from a single 1 V supply voltage.

【 授权许可】

   

【 预 览 】
附件列表
Files Size Format View
20150520115022684.pdf 218KB PDF download
【 参考文献 】
  • [1]J. Bausells et al., "Ion-Sensitive Field-Effect Transistors Fabricated in a Commercial CMOS Technology," Sens. Actuators B. Chem., vol. 57, 1997, pp. 56-62.
  • [2]P.A. Hammond, D. Ali, and D.R.S. Cumming, "Design of a Single-Chip pH Sensor Using Conventional 0.6-mm CMOS Process," IEEE Sensors J., vol. 4, no. 6, Dec. 2004, pp. 706-712.
  • [3]L. Shepherd and C. Toumazou, "A Biochemical Translinear Principle with Weak Inversion ISFETs," IEEE Trans. Circuits Syst. – I, vol. 52, no. 12, Dec. 2005, pp. 2614-2619.
  • [4]S. Martinoia and G. Massobrio, "A Behavioral Macromodel of the ISFET in SPICE," Sens. Actuators B. Chem., vol. 62, 2000, pp. 182-189.
  文献评价指标  
  下载次数:10次 浏览次数:10次