Characteristics of FerroelectricTransistors with BaMgF4 Dielectric

ETRI Journal

关键词: Adhesion;    Cracking;    Hysteretic Drain Current;    CMP;    MFSFET;    Polysilicon Source/Drain BaMgF4;    Ferroelectric;   

Others  :  1184161
DOI  :  10.4218/etrij.98.0198.0208

【 摘 要 】

The structure and electrical characteristics of metal-ferroelectric-semiconductor FET(MFSFET) for a single teansistor memory are presented. The MFSFET was comprised of polysilicon islands as source/drain electrodes and BaMgF₄film as a gate dielectric. The

   

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