Infrared Transparency and Conductivity of Amorphous Ternary Ceramic Thin Films

2018 3rd International Conference on Insulating Materials, Material Application and Electrical Engineering

材料科学;无线电电子学;电工学

Ci, Huiju^1 ; Zhao, Xin^1 ; Qi, Kangcheng^1 ; Li, Wei^1,2

School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China^1

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China^2

关键词: Amorphous structures;    Ceramic thin films;    Direct current sputtering;    Four point probe;    Glass substrates;    Infrared transparency;    NIR spectrometer;    Optoelectronic properties;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/452/2/022147/pdf
DOI  :  10.1088/1757-899X/452/2/022147

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

In this paper, using polycrystalline Ti3SiC2 powder as target, for the first time, amorphous ternary ceramic (a-TSC) thin films are successfully fabricated on quartz and glass substrates at room temperature by direct-current (DC) sputtering. The microstructural and optoelectronic properties of the a-TSC thin films are investigated by means of XRD, Raman, EDS, four-point probe system and Vis-NIR spectrometer, respectively. It is found that despite of amorphous structure and having not so good conductivity compared with Ti3SiC2, the a-TSC thin films still have enough conductivity. Furthermore, compared with ITO, FTO and AZO thin films, the transmittance of a-TSC thin films is much higher in infrared region regardless of the film thickness. It is suggested for a-TSC thin films that the film thickness should be controlled less than 150nm in order to obtain a higher transparency with an appropriate conductivity. It is believed that a-TSC thin film will find its way to be applied in optoelectronic devices in the near future.