Influence of the domain structure on piezoelectric and dielectric properties of relaxor SBN single crystals

Scanning Probe Microscopy 2018

Shikhova, V.A.^1 ; Ushakov, A.D.^1 ; Fedorovyh, V.V.^1 ; Anikin, V.A.^1 ; Esin, A.A.^1 ; Shur, V Ya^1 ; Kholkin, A.L.^1,2 ; Ivleva, L.I.^3

School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg

620000, Russia^1

Department of Physics and CICECO - Aveiro Institute of Materials, University of Aveiro, Aveiro

3810-193, Portugal^2

Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow

119991, Russia^3

关键词: Dielectric permittivities;    Domain structure;    Frequency dependence;    Initial domains;    Piezoelectric response;    Relaxors;    Temperature dependence;    Zero-field cooling;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/443/1/012031/pdf
DOI  :  10.1088/1757-899X/443/1/012031

来源: IOP

【 摘 要 】

We have studied the influence of initial domain structure on piezoelectric and dielectric properties of Sr0.61Ba0.39Nb2O6 single crystals slightly doped with Ce and Ni. Initial domain structure was created by zero-field cooling, in-field cooling, and partial switching. The difference in the frequency dependences of macroscopic piezoelectric response and temperature dependences of dielectric permittivity for various initial domain structures was revealed.