Pronounced light trapping effect and enhanced photo-electrochemical property of type (II) aligned graphitic-C3N4 with embedded 1-D ZnO nanostructures

Scanning Probe Microscopy 2018

Singh, S.^1 ; Khanuja, M.^2

Shaheed Rajguru College of Applied Sciences for Women, University of Delhi, New Delhi

110096, India^1

Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (A Central University), New Delhi

110025, India^2

关键词: Electrochemical activities;    Electrostatic potentials;    Graphitic carbon nitrides;    Illumination conditions;    Light trapping effects;    Photocurrent density;    Photoelectrochemical properties;    Thermal decomposition process;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/443/1/012033/pdf
DOI  :  10.1088/1757-899X/443/1/012033

来源: IOP

【 摘 要 】

Graphitic carbon nitride (g-C3N4) with embedded 1D-ZnO nanostructures was prepared by simple two step thermal decomposition process. Photocatalyst exhibited higher optical absorption than pure ZnO due to π-π conjugations of C3N4, which thus allow greater adsorption on its surface. Conduction band (CB) edge of g-C3N4 being more negative than ZnO and Valence band (VB) of ZnO is more positive than VB of g-C3N4; this alignment of Type (II) resulted in transfer of excited electrons in g-C3N4 to the CB of ZnO. This charge transfer created the internal electrostatic potential, which aided in reducing the recombination rate of charge carriers. Finally, samples were tested for photo-electrochemical activity measured by generated photocurrent density with respect to voltage and time under illumination conditions.