Domain structure imaging in PMN-PT crystals using channelling-contrast backscattered electron microscopy

Scanning Probe Microscopy 2018

Vlasov, E.O.^1 ; Chezganov, D.S.^1 ; Gimadeeva, L.V.^1 ; Ushakov, A.D.^1 ; Hu, Q.^2 ; Wei, X.^2 ; Shur, V. Ya.^1

School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg

620000, Russia^1

Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Centre for Dielectric Research, Xi'An Jiaotong University, Xi'an

710049, China^2

关键词: Backscattered electron microscopy;    Backscattered electrons;    Domain structure;    Domain structure imaging;    High resolution;    Optimal parameter;    Piezoresponse force microscopy;    Surface domains;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/443/1/012038/pdf
DOI  :  10.1088/1757-899X/443/1/012038

来源: IOP

【 摘 要 】

We demonstrate the abilities of various SEM techniques for domain imaging in PMN-PT crystals with different compositions. It is shown that the imaging of the chemically etched relief is limited by its destructivity and potential contrast - by low resolution and contrast instability. The optimal parameters of the imaging by backscattered electron channelling allow obtaining the high-resolution domain imaging in PMN-PT crystals. The domain structure change as a result of the phase transition are imaged. The correlation between the images of the surface domain structure obtained by scanning electron microscopy and piezoresponse force microscopy is demonstrated.