Calculation and Analysis of Graphene Nanoribbons Field Effect Transistor Structure and Characteristics

2018 International Conference on Smart Materials Applications

Chun, Wei^1 ; Ming, Li^2 ; Tongnan, Hang^1

School of Electronic and Information Engineering, Wuhan Donghu University, Wuhan

430211, China^1

Information Management Center, Air Force Early Warning Academy, Wuhan

430019, China^2

关键词: Characteristics analysis;    Computer aided simulations;    Field effect transistor structures;    Graphene field-effect transistors;    Graphene nanoribbons;    Schottky barriers;    Structure and properties;    Switching characteristics;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/422/1/012008/pdf
DOI  :  10.1088/1757-899X/422/1/012008

来源: IOP

【 摘 要 】

Because there is no gap between conduction band and valence band of graphene, it is difficult to achieve switching characteristics when transistors are fabricated. In order to open the graphene band gap, researchers have explored many methods, such as tailoring Shi Mocheng quantum dots, nanobelts, nano grids or laying graphene on a special substrate, one of the feasible ways is to regulate the electrical properties of graphene by doping. Through the analysis on the structure and properties of graphene band calculation, with the help of computer aided simulation, the ID and VG characteristics analysis of the Schottky barrier graphene field effect transistor (SBFET) and MOS structure of graphene field effect transistor (MOSFET) are investigated in this study. The results are of high reference value for the study of the structure and properties of graphene nanoribbons.