The potential for sensitivity enhancement by the thermoelectric effect in carbon-nanotube and graphene Tera-FETs

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Bauer, M.^1 ; Andersson, M.^2 ; Zak, A.^2 ; Sakalas, P.^3 ; ibiraite, D.^4 ; Lisauskas, A.^1,4 ; Schröter, M.^3 ; Stake, J.^2 ; Roskos, H.G.^1

Department of Physics, Goethe-University Frankfurt, Max-von-Laue-Strasse 1, Frankfurt

DE-60438, Germany^1

Department of Michrotechnology and Nanoscience, Chalmers University, Kemivägen 9, Gothenburg

SE-41296, Sweden^2

Department of Electron Devices and Integrated Circuits, Technical University Dresden, Helmholtzstrasse 18, Dresden

DE-01062, Germany^3

Department of Radiophysics, Vilnius University, 9 Sauletekio, Vilnius

LT-10222, Lithuania^4

关键词: Bow-tie antennas;    Carbon nanotube transistors;    Graphene field-effect transistors;    Growth process;    Integrated antennas;    Sensitivity enhancements;    Signal contribution;    Transistor channels;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012004/pdf
DOI  :  10.1088/1742-6596/647/1/012004

来源: IOP

【 摘 要 】

We report on terahertz (THz) measurements with graphene field-effect transistors with integrated antennas (Tera-FETs) and lay special emphasis on thermoelectric contributions to the detected THz photoresponse. Graphene Tera-FETs with integrated broad-band bow- tie antennas were fabricated in a CVD-based growth process and were successfully applied for detection at 600 GHz with optical NEPs down to 515 pW/√Hz. While rectification of THz radiation by (distributed) resistive mixing of charge-density waves induced in the gated transistor channel region is well known, significant additional contributions to the detected signal have experimentally been observed and hot-carrier thermoelectric effects have been identified as a possible origin of these signals. We also observe similar signal contributions in carbon- nanotube transistors.