Formation of the thin film heterostructures CuO/ZnO by RF magnetron sputtering powder targets

25th International Conference on Vacuum Technique and Technology

Mukhin, N.V.^1 ; Chigirev, D.A.^1 ; Bakhchova, L.D.^1 ; Konoplev, G.A.^1 ; Kochunov, K.V.^1 ; Kashkul, I.N.^1

Saint-Petersburg State Electrotechnical University LETI, St. Petersburg

197376, Russia^1

关键词: Heterojunction structures;    Intermediate layers;    Medium temperature;    RF magnetron reactive sputtering;    rf-Magnetron sputtering;    Series resistances;    Voltage characteristics;    Wavelength ranges;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/387/1/012054/pdf
DOI  :  10.1088/1757-899X/387/1/012054

来源: IOP

【 摘 要 】

Method for forming thin film heterostructures ZnO/CuO in a single technological cycle with vacuum circuit with use RF magnetron reactive sputtering of copper powder and zinc oxide was offered. The resulting film CuO had band gap of 1.6...1.7 eV and possessed stability up to 350°C. ZnO film had a transparency of 85% in the wavelength range of 400...1100 nm. Selection of medium temperatures for forming the heterostructure (200...250°C) allowed to reduce its series resistance, and the addition of the thin heterojunction structure of the intermediate layer i-ZnO allowed to improve nonlinearity voltage characteristics and improve the photoresponse.