Properties of planar structures based on Policluster films of diamond and AlN

6th International Conference: Modern Technologies for Non-Destructive Testing

Belyanin, A.F.^1 ; Luchnikov, A.P.^2 ; Nalimov, S.A.^1 ; Bagdasarian, A.S.^3

Central Research Technological Institute Technomash, Moscow, Russia^1

Moscow Technological University (MIREA), Moscow, Russia^2

Institute of Radio-engineering and Electronics of RAS, Moscow, Russia^3

关键词: AlN films;    Arc discharge;    Gasphase;    Layered Structures;    Photovoltaic devices;    Planar structure;    RF magnetron reactive sputtering;    Si substrates;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/289/1/012041/pdf
DOI  :  10.1088/1757-899X/289/1/012041

来源: IOP

【 摘 要 】

AlN films doped with zinc were grown on Si substrates by RF magnetron reactive sputtering of a compound target. Policluster films of diamond doped with boron were formed on layered Si/AlN substrates from the gas phase hydrogen and methane, activated arc discharge. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic policluster films of diamond and AlN films were studied. Photovoltaic devices based on the AlN/PFD layered structure are presented.