25th International Conference on Vacuum Technique and Technology | |
Finite element modeling of nanoindentation and scratching of Si, SiC, Ge crystals with anisotropic plasticity | |
Telyatnik, R.S.^1 | |
Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, Saint Petersburg | |
199178, Russia^1 | |
关键词: Anisotropic elastoplasticity; Anisotropic plasticity; Cohesive zone model; Computational quantum chemistry; Hardness anisotropy; Non-linear stress-strain; Plastic anisotropy; Quasi-static; | |
Others : https://iopscience.iop.org/article/10.1088/1757-899X/387/1/012078/pdf DOI : 10.1088/1757-899X/387/1/012078 |
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来源: IOP | |
【 摘 要 】
Parameters of Hill's anisotropic elastoplasticity for diamond and Si, SiC, Ge semiconductors have been estimated from nonlinear stress-strain curves obtained by computational quantum chemistry. Using these parameters, finite element modeling of nanoindentation with Berkovich pyramid and frictionless scratching with spherical tip have been carried out. It has been shown, that the plastic anisotropy leads to the hardness anisotropy commonly observed by experimental indentation of (111), (011) and (001) crystallographic surfaces of the diamond-like crystals. The creep flow has been regarded in a quasi-static approach. Propagation of a median crack has been accounted by cohesive zone model.
【 预 览 】
Files | Size | Format | View |
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Finite element modeling of nanoindentation and scratching of Si, SiC, Ge crystals with anisotropic plasticity | 957KB | download |