Temperature-dependent electrical transport characteristics of p-SnS/n-WO3:Sb heterojunction diode

2018 International Joint Conference on Materials Science and Mechanical Engineering

Gaewdang, T.^1 ; Wongcharoen, Ng^1

Physics Department, King Mongkut's Institute of Technology Ladkrabang, Bangkok

10520, Thailand^1

关键词: Conduction Mechanism;    Electrical transport characteristics;    Exponential trap distribution;    Forward bias voltage;    Heterojunction diodes;    Space-charge-limited current;    Temperature dependence;    Temperature dependent;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/383/1/012006/pdf
DOI  :  10.1088/1757-899X/383/1/012006

来源: IOP

【 摘 要 】

The p-SnS/n-WO3:Sb heterojunction diode was successfully obtained by thermal evaporating SnS thin films on WO3 doped with 2.0 mol% Sb2O3 of 1 mm thick ceramic pellet substrate. The electrical properties of p-SnS/n-WO3:Sb heterojunction were investigated by forward current-voltage-temperature (I-V-T) characteristics in the temperature range of 20-300 K. It was found that at low forward bias voltage (3:Sb. The temperature dependence of the saturation current and ideality factor are well described by tunneling enhanced recombination model occurring at junction interface with Ea and E00 values about 1.565 eV and 99.5 meV, respectively.