Simulation Analysis Method of Internal Temperature Distribution in UHV DC Voltage Measuring Device

2018 3rd Asia Conference on Power and Electrical Engineering

能源学;电工学

Xie, Tingting^1 ; Yang, Zhongzhou^1 ; Feng, Jianhua^1 ; Zhang, Yuan^1 ; Wang, Shan^1

Xi'An High Voltage Apparatus Research Institute, Xi'an, Shaanxi

710077, China^1

关键词: Calculation models;    Environment temperature;    Internal temperature distribution;    Internal temperature rise;    Measuring accuracy;    Resistive elements;    Simulation analysis methods;    Temperature range;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/366/1/012083/pdf
DOI  :  10.1088/1757-899X/366/1/012083

来源: IOP

【 摘 要 】

The measuring accuracy of UHV DC voltage measuring device has a great relationship with the temperature. It is necessary to study the internal temperature distribution of the device to ensure that the operating device could meet the accuracy requirement in the temperature range. Firstly, the device dynamic thermal flow field is analyzed in this paper. The flow field model is established. Through analyzing the calculation model, the internal temperature distributions under different environment temperatures is obtained. And then, the internal temperature rise at the rated voltage is measured directly by experiment. And the validity of the model is verified by the experiment. This paper introduces the details of the method. By studying the internal temperature distribution of the device, the temperature range in which the device is running is gotten. Suitable resistive elements should be chosen during the design so as to meet the measuring accuracy of the device.