Main principles of developing exploitation models of semiconductor devices

2nd International Conference "Cognitive Robotics"

工业技术;无线电电子学;计算机科学

Gradoboev, A.V.^1 ; Simonova, A.V.^1

National Research Tomsk Polytechnic University, Tomsk, Russia^1

关键词: Electronic product;    Exploitation mode;    Ionizing irradiation;    Operation factors;    Operational properties;    Primary task;    Radiation modeling;    Reliability model;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/363/1/012025/pdf
DOI  :  10.1088/1757-899X/363/1/012025

来源: IOP

【 摘 要 】

The paper represents primary tasks, solutions of which allow to develop the exploitation modes of semiconductor devices taking into account complex and combined influence of ionizing irradiation and operation factors. The structure of the exploitation model of the semiconductor device is presented, which is based on radiation and reliability models. Furthermore, it was shown that the exploitation model should take into account complex and combine influence of various ionizing irradiation types and operation factors. The algorithm of developing the exploitation model of the semiconductor devices is proposed. The possibility of creating the radiation model of Schottky barrier diode, Schottky field-effect transistor and Gunn diode is shown based on the available experimental data. The basic exploitation model of IR-LEDs based upon double AlGaAs heterostructures is represented. The practical application of the exploitation models will allow to output the electronic products with guaranteed operational properties.