Development of silicon growth techniques from melt with surface heating

8th International Scientific Colloquium on Modelling for Materials Processing

Kravtsov, Anatoly^1

KEPP EU AS, Carnikavas iela, 5, Riga

1034, Latvia^1

关键词: Crystal growth process;    Development history;    Electron beam heating;    Growth process;    Melt surfaces;    Silicon growth;    Surface heating;    Technology development;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/355/1/012007/pdf
DOI  :  10.1088/1757-899X/355/1/012007

来源: IOP

【 摘 要 】

The paper contains literary and personal data on the development history of silicon-growing technology with volumetric and surface melt heating. It discusses the advantages and disadvantages of surface-heating technology. Examples are given of the implementation of such processes in the 60s-70s of the last century, and the reasons for the discontinuation of the relevant work. It describes the main solutions for the implementation of crystal growth process with the electron-beam heating of the melt surface, implemented by KEPP EU (Latvia). It discusses differences in the management of the growth process for the crystals with constant diameters compared to the Czochralski method. It lists geometrical and electro-physical properties of the obtained crystals. It describes the possible use of such crystals and the immediate challenges of technology development.