RF MEMS Based Tunable Bandpass Filter For X-Band Applications

3rd International Conference on Communication Systems

无线电电子学

Chaubey, Mahesh Kumar^1 ; Bhadauria, Avanish^1

CSIR-Central Electronics Engineering Research Institute, Pilani

333031, India^1

关键词: Capacitance values;    Centre frequency;    Design and simulation;    Different substrates;    Frequency ranges;    Silicon substrates;    Substrate thickness;    Tunable band-pass filters;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/331/1/012030/pdf
DOI  :  10.1088/1757-899X/331/1/012030

来源: IOP

【 摘 要 】

In this paper, we present the design and simulation of RF MEMS based Tunable combline band pass filters for X-band applications at different substrate thicknesses and studied the effect of thickness on tuning. The proposed filters are designed on high resistive silicon substrate of 500μm and 300 thicknesses. The tunability is achieved by using MEMS based varacter replaced with fix capacitor in conventional combline filter. First, the microstrip combline filter is designed at the centre frequency of 9.5 GHz and then tuning is achieved by varying the capacitance in the designed combline filters. The electromagnetic simulation has been carried out using HFSS v15 software based on finite element method (FEM). The tuning of the filter on silicon substrate of 500 μm is achieved by changing the capacitance value from 0.2035 pF to 0.4035 pF in the model in HFSS, which resulted the tuning in the frequency range of 7.85 to 10.35GHz. Insertion loss of design filter is in the range of 1dB within the tuning range. In case of substrate thickness 300 μm the tuning of the filter is achieved by changing the capacitance value from 0.293 pF to 0.403 pF in the model in HFSS, which resulted the tuning in the frequency range of 8.80 to 9.90 GHz. Insertion loss of design filter is in the range of ∼1.2dB within the tuning range.