Finite Element Analysis of Temperature Field of Electromagnetic Heating in Nitride MOCVD Reaction Chamber

2017 International Symposium on Application of Materials Science and Energy Materials

材料科学;能源学

Hu, Shigang^1 ; Wu, Qingyang^1 ; Li, Jin^1 ; Cao, Huiyi^1 ; Zhang, Yanan^1 ; Li, Zhiming^2

School of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan, China^1

School of Information Science and Engineering, University of Jinan, Jinan, China^2

关键词: A3. metal organic chemical vapor deposition (MOCVD);    Current frequency;    Current intensity;    Distribution of temperature;    Electromagnetic heating;    Heating conditions;    Optimal design parameters;    Substrate temperature;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/322/2/022006/pdf
DOI  :  10.1088/1757-899X/322/2/022006

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

In this paper, the distribution of temperature field in the reaction chamber of metal organic chemical vapor deposition (MOCVD) used for growing GaN material was simulated by finite element method. The induction heating conditions that affect the temperature distribution are analyzed, such as current frequency, current intensity, coil turns, coil spacing and the height of the base. And their influence on the temperature distribution of the substrate and their relationship with the substrate temperature are also given. The optimal design parameters of current intensity, current frequency, coil spacing, coil turns and base height are obtained by simulation.