Characterization of Co:TiO2 Thin Film Grown by MOCVD Technique

2nd International Conference on Innovation in Engineering and Vocational Education

工业技术;教育

Saripudin, A.^1 ; Purnama, W.^1

Program Studi Teknik Elektro, Fakultas Pendidikan Teknologi Dan Kejuruan, Universitas Pendidikan Indonesia, Jl. Dr. Setiabudhi 229, Bandung

40154, Indonesia^1

关键词: A3. metal organic chemical vapor deposition (MOCVD);    Average grain size;    Average growth rate;    Co:TiO2 thin films;    Energy dispersive X ray spectroscopy;    Scherrer's formula;    Structure of films;    Substrate temperature;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/306/1/012007/pdf
DOI  :  10.1088/1757-899X/306/1/012007

来源: IOP

【 摘 要 】

The Co:TiO2thin film was grown on n-type Si(100) by metal organic chemical vapor deposition (MOCVD) technique. The film's growth parameters are as follow: substrate temperature of 450°C, bubbler temperature of 70°C, reactor chamber pressure of 2 militorr, and growth time of 2 hours. We characterized the structure of film by X-ray Difractometer (XRD), the morphology was characterized by Scanning Electron Microscope (SEM), and the fraction of Co atoms in TiO2was characterized by Energy Dispersive x-ray Spectroscopy (EDS). The XRD result shows that the Co:TiO2thin film is an anatase phase crystal dominated by A(213) orientation. Using Warren-Scherrer's formula, the average grain size of Co:TiO2is 169 nm. The SEM result shows that the Co:TiO2film surface is quite coarse with relatively homogeneous grain shape. the average growth rate of Co:TiO2film is 0.78 μm/h. In addition, the EDS result shows that Co atoms have been incorporated into the film replacing a portion of the Ti atoms by 0.085%.