2nd International Conference on Innovation in Engineering and Vocational Education | |
Characterization of Co:TiO2 Thin Film Grown by MOCVD Technique | |
工业技术;教育 | |
Saripudin, A.^1 ; Purnama, W.^1 | |
Program Studi Teknik Elektro, Fakultas Pendidikan Teknologi Dan Kejuruan, Universitas Pendidikan Indonesia, Jl. Dr. Setiabudhi 229, Bandung | |
40154, Indonesia^1 | |
关键词: A3. metal organic chemical vapor deposition (MOCVD); Average grain size; Average growth rate; Co:TiO2 thin films; Energy dispersive X ray spectroscopy; Scherrer's formula; Structure of films; Substrate temperature; | |
Others : https://iopscience.iop.org/article/10.1088/1757-899X/306/1/012007/pdf DOI : 10.1088/1757-899X/306/1/012007 |
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来源: IOP | |
【 摘 要 】
The Co:TiO2thin film was grown on n-type Si(100) by metal organic chemical vapor deposition (MOCVD) technique. The film's growth parameters are as follow: substrate temperature of 450°C, bubbler temperature of 70°C, reactor chamber pressure of 2 militorr, and growth time of 2 hours. We characterized the structure of film by X-ray Difractometer (XRD), the morphology was characterized by Scanning Electron Microscope (SEM), and the fraction of Co atoms in TiO2was characterized by Energy Dispersive x-ray Spectroscopy (EDS). The XRD result shows that the Co:TiO2thin film is an anatase phase crystal dominated by A(213) orientation. Using Warren-Scherrer's formula, the average grain size of Co:TiO2is 169 nm. The SEM result shows that the Co:TiO2film surface is quite coarse with relatively homogeneous grain shape. the average growth rate of Co:TiO2film is 0.78 μm/h. In addition, the EDS result shows that Co atoms have been incorporated into the film replacing a portion of the Ti atoms by 0.085%.
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