SRT research of the crystal defects on the TGT synthesized diamond doped with boron and phosphorus

2nd International Conference on New Material and Chemical Industry

材料科学;化学工业

Yu, W.L.^1 ; Jia, X.P.^2 ; Yuan, Q.X.^3 ; Huang, W.X.^3

Yanshan Univ., State Key Lab Metastable Mat Sci and Technol, Qinhuangdao

066004, China^1

National Lab of Superhard Materials, Jilin University, Changchun

130012, China^2

Institute of High Energy Physics, Beijing

100039, China^3

关键词: Cone shape;    Ionic radius;    Mixed type;    Phosphorous doping;    Phosphorous ions;    Synthesized diamond;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/292/1/012028/pdf
DOI  :  10.1088/1757-899X/292/1/012028

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Crystal defects of two synthesized diamonds doped with boron and phosphorus are compared by synchrotron radiation topography (SRT). The crystal defects in the specimen are mainly dislocations. The dislocations are assembled in bundles in the cone-shape and distributed in the directions approximately towards toand . The Burgers vectors of most of the dislocations are parallel to [202] and oblique to the dislocations, showing that the dislocations are of mixed type. The features of the crystal defects are quite different in several aspects compared with the diamonds without phosphorous doping. The ionic radius of phosphorous is 118.75 percent larger than that of carbon and intensive distortion may occur near the phosphorous ions. The dislocations thus originated in bundles to release the stress caused by the phosphorous doping.