Nonlinear optical absorption and ultrafast optical response of un-doped and P-doped nanocrystalline Si/SiO2 multilayers

6th conference on Advances in Optoelectronics and Micro/nano-optics

Zhang, P.^1 ; Li, D.K.^2 ; Jiang, L.Y.^1 ; Xu, J.^2

Henan Key Lab of Information-based Electrical Appliances, College of Electrical and Information Engineering, Zhengzhou University of Light Industry, Zhengzhou

450002, China^1

National Laboratory of Solid State Microstructures, Sch. of Electron. Sci. and Eng. and Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing

210093, China^2

关键词: Nanocrystalline Si;    Non-linear optical properties;    Nonlinear absorptions;    Nonlinear optical absorption;    Phosphorous doping;    Recombination process;    Si/SiO2 multilayers;    Ultra-fast dynamics;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/844/1/012012/pdf
DOI  :  10.1088/1742-6596/844/1/012012

来源: IOP

【 摘 要 】

The nonlinear optical properties and ultrafast optical response of Si/SiO2multilayers with and without phosphorus doping are comparatively studied in the present work. The enhanced nonlinear absorption and fast recombination process were observed after phosphorus doping, the defect states generated by high phosphorus doping was the possible origination. It was suggested that the nonlinear optical repose as well as the ultrafast dynamic process could be changed greatly via phosphorous doping, which provided a new approach to improve the performance of Si-based photonic devices.