Crystal Orientation and Electrical Properties of Tin Oxide Transparent Conducting Films Deposited on Rutile Surface

3rd Annual International Workshop on Materials Science and Engineering

Sawada, Y.^1,2 ; Hashimoto, Y.^1,2 ; Hoshi, Y.^1,2 ; Uchida, T.^1,2 ; Kobayashi, S.^1,2 ; Sun, L.^1,2,3 ; Yue, B.^2,3

Center for Hyper Media Research, Graduate School of Engineering, Tokyo Polytechnic University, 1583 Iiyama, Kanagawa Atsugi

243-0297, Japan^1

Guilin University of Electronics Technology, 1 Jinji Rd., Guilin, Guangxi, China^2

Rigaku Corporation, 3-9-12 Matsubara-cho, Akishima, Tokyo

196-8666, Japan^3

关键词: Carrier electrons;    Double domain;    Glass substrates;    Mist CVD;    Rutile surfaces;    Single domains;    Transparent conducting films;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/250/1/012021/pdf
DOI  :  10.1088/1757-899X/250/1/012021

来源: IOP

【 摘 要 】

Thin films of tin oxide (SnO2) without doping are attractive transparent conducting film since environmentally unfavorable elements of antimony or fluorine are eliminated. Tin oxide films without doping were fabricated very cheaply on (001) and (100) planes of single crystal of rutile (TiO2) by spray chemical vapor deposition (mist CVD). The film deposited on rutile (001) surface was poorly epitaxial (double domain) but with higher mobility (24 cm2V-1s-1) and lower resistivity (1.6×10-3Ω cm) than that deposited on glass substrate (16 cm2V-1s-1and 2.4×10-3Ω cm) for reference. Deposition on rutile (100) surface resulted in better epitaxial growth (single domain). The mobility (39 cm2V-1s-1) and the carrier electron density (2.7×1020cm-3) were much higher. The resistivity (6.2×10-4Ω cm) was compatible with those doped with antimony or fluorine and will be the lowest among tin oxide films without doping.