Temperature-dependent photoluminescence characteristics of CH3NH3PbI3-xClx perovskite thin film

5th International Conference on Manufacturing, Optimization, Industrial and Material Engineering

Cheng, F.J.^1 ; Hu, S.Y.^2 ; Chen, L.Y.^3 ; Lee, Y.C.^4 ; Yin, G.Z.^5 ; Tiong, K.K.^5 ; Shen, J.L.^6

Department of Electrical Engineering, Tungnan University, Shenkeng, New Taipei City, Taiwan^1

Department of Digital Technology Design, Tungfang Design Institute, Kaohsiung, Taiwan^2

Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan^3

Department of Electronic Engineering, Tungnan University, Shenkeng, New Taipei City, Taiwan^4

Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan^5

Department of Physics, Chung Yuan Christian University, Chungli, Taiwan^6

关键词: Broad emission bands;    Halide perovskites;    Low temperatures;    Luminescence characteristics;    Orthorhombic phase;    Perovskite thin films;    Temperature dependent;    Temperature dependent photoluminescences;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/215/1/012030/pdf
DOI  :  10.1088/1757-899X/215/1/012030

来源: IOP

【 摘 要 】

Recently, organometal halide perovskites are widely considered as promising materials in light emitting and lasing devices due to their potential optical properties. The luminescence characteristics of CH3NH3PbI3-xClxperovskite material have investigated by temperature-dependent PL measurements. We suggest that the tetragonal inclusions in the orthorhombic phase of CH3NH3PbI3-xClxthin film at low temperature result in the 12 K PL spectrum with a broad emission band. In addition, the PL peak of CH3NH3PbI3-xClxthin film as a function temperature shows a tendency of buleshift, which is contrary to the typical tendency of redshift for traditional semiconductor materials.