Effect of Cu-Dopant on the Structural, Magnetic and Electrical Properties of ZnO

4th International Conference on Advanced Materials Science and Technology

Aryanto, D.^1 ; Kurniawan, C.^1 ; Subhan, A.^1 ; Sudiro, T.^1 ; Sebayang, P.^1 ; Ginting, M.^1 ; Siregar, S.M.K.^2 ; Nasruddin, M.N.^2

Research Center for Physics, Indonesian Institute of Sciences, Serpong, Tangerang Selatan, Banten

15314, Indonesia^1

Postgraduate Program, Universitas Sumatera Utara, Medan

20155, Indonesia^2

关键词: Diffraction intensity;    Dopant concentrations;    Hexagonal wurtzite;    magnetic;    Magnetic and electrical properties;    Polycrystalline;    Solid-state reaction techniques;    structural;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/202/1/012049/pdf
DOI  :  10.1088/1757-899X/202/1/012049

来源: IOP

【 摘 要 】

Zn1-xCuxO (x = 0, 2, 3, and 4 at.%) was synthesized by using solid-state reaction technique. The ZnO and CuO powders were mixed and then milled by using high-speed shaker mill. The influence of Cu dopants on the structure, magnetic, and electrical properties was investigated by using XRD, VSM, and I-V and C-V measurements. The XRD analysis showed that the Zn1-xCuxO had hexagonal wurtzite polycrystalline. The diffraction intensity decreased and the peak position shifted directly to a higher 2θ angle with increasing the dopant concentration. Furthermore, the lattice parameters decreased when the ZnO was doped with x = 0.04, which indicated that the crystal structure changed. The increase of Cu dopants was believed to affect the magnetic and electrical properties of ZnO.