Stark effect of shallow donor impurities in HgS Inhomogeneous Quantum Dots

7th Maghreb Days of Material Sciences

M'Zerd, S.^1 ; Rahmani, K.^2 ; Janati, S.^1 ; Chrafih, Y.^2 ; Zorkani, I.^1 ; Jorio, A.^1

Solid Group of Nanomaterials and Renewable Energies, Laboratory of Solid State Physics, Faculty of Sciences Dhar El Mahraz, University Sidi Mohamed Ben Abdellah Atlas Fez, Morocco^1

LIRST, FP, USMS, Beni Mellal, Morocco^2

关键词: Critical value;    Effective mass approximation;    Electric field strength;    Polarizabilities;    Shallow donors;    Spherical surface;    Uniform electric fields;    Variational methods;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/186/1/012015/pdf
DOI  :  10.1088/1757-899X/186/1/012015

来源: IOP

【 摘 要 】

Using the variational method, within the effective mass approximation, we have calculated the binding energy and the Polarizability of a shallow donor confined to move in [CdS/HgS/CdS] Inhomogeneous Quantum Dots, in the presence of a uniform electric field. We consider an infinitely deep well and we present our results as function of the size of the well and for several values of the electric field strength: (i) The Polarizability decreases when the electric field increases. We find that the Polarizability it is more influenced by the quantum confinement than by the electric field. (ii) The binding energy depends on the inner and the outer radius of the IQD, decrease when the electric field increases and depends strongly on the donor position, (iii) We have demonstrated the existence of a critical value of radius ratio which can be used to distinguish the tree dimension confinement from the spherical surface confinement.